ZnSe:N samples with different doping levels have been exposed ex situ to hy
drogen (H) or deuterium (D) plasma. Secondary ion mass spectroscopy reveals
that the H/D profile matches exactly the N profile in all samples, whateve
r the plasma-exposure conditions. All samples are semi-insulating after H/D
exposure. Photoluminescence spectroscopies show that the deep-compensating
donor is N-related, which help in discarding a few plausible mechanisms. F
inally, our results also confirm that the main shallow-compensating donor i
n ZnSe:N is a N-related defect. (C) 2000 Elsevier Science B.V. All rights r
eserved.