Magneto-optics on p-type ZnSe epilayers: the dependence on the nitrogen doping concentration

Photoluminescence (PL) experiments under high magnetic fields in the Farada y configuration on nitrogen-doped ZnSe epilayer structures grown by molecul ar beam epitaxy are applied to study the impurity centers in the compensati on limit. Following the nitrogen concentration level [N], different regimes of field dependence of the donor-acceptor pair transitions are reported. T he wave function shrinkage model gives the mean distance (R) between impuri ty centers as the critical parameter for this feature. The transitions rela ted to excitons bound to shallow (I-1) and deep accepters (I-1(P)) are also discussed. Their field-dependences are observed to be directly connected t o the nitrogen doping density, and imply different capture rates depending on the nature of the neutral impurity. (C) 2000 Elsevier Science B.V. All r ights reserved.