Spin-flip Raman scattering studies of II-VI heterostructures

Spin-flip Raman (SFR) scattering is now an established technique for the in vestigation of semiconductor heterostructures. Because the scattering is re sonantly enhanced when the laser is adjusted to coincide with the appropria te excitonic transition, the technique has high sensitivity. It is also hig hly selective, since the resonance enhancement occurs at different waveleng ths for scattering by carriers confined under different circumstances. For electrons, the SFR spectra enable the g-factor to be determined, thus provi ding tests of band structure theories. The g-factor is sensitive also to qu antum confinement, when it may become anisotropic. In the case of holes, th e higher angular momentum (J = 3/2) makes the SFR spectra highly dependent on the state of strain of the material. Spin-flip signals from localised ex citons can also be detected. Such signals enable the electron-hole exchange interactions to be determined and are thus a sensitive probe of the locali sation properties of the exciton, for example in quantum dots of differing sizes. Recent developments will be reviewed to illustrate how the technique can be used to investigate the physics and materials issues associated wit h II-VI structures. (C) 2000 Elsevier Science B.V. All rights reserved.