Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-tempe
rature photoluminescence (PL) properties of CdS QDs were studied and a blue
shift was observed when the S composition in ZnSxSe1-x was increased. This
shift is related to the band line-up between ZnSxSe1-x and CdS; the band l
ine-up is type-II. Blue-light-emitting diode (LED) structures embedded in C
dS QD layers in the pn junction of ZnSe or ZnSxSe1-x were fabricated. I-V c
haracteristics were compared for two device structures. (C) 2000 Published
by Elsevier Science B.V. All rights reserved.