Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe

Citation
K. Kitamura et al., Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe, J CRYST GR, 214, 2000, pp. 680-683
Citations number
9
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
214
Year of publication
2000
Pages
680 - 683
Database
ISI
SICI code
0022-0248(200006)214:<680:SCQSGO>2.0.ZU;2-Z
Abstract
Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-tempe rature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnSxSe1-x was increased. This shift is related to the band line-up between ZnSxSe1-x and CdS; the band l ine-up is type-II. Blue-light-emitting diode (LED) structures embedded in C dS QD layers in the pn junction of ZnSe or ZnSxSe1-x were fabricated. I-V c haracteristics were compared for two device structures. (C) 2000 Published by Elsevier Science B.V. All rights reserved.