Ak. Ghorai et Dp. Bhattacharya, LATTICE-CONTROLLED ELECTRON-TRANSPORT CHARACTERISTICS IN QUANTIZED SURFACE-LAYERS AT LOW-TEMPERATURE, Surface science, 380(2-3), 1997, pp. 293-301
A theory of intravalley acoustic scattering of the carriers in a non-d
egenerate two-dimensional electron gas is developed here under the con
dition of low lattice temperature when the assumptions of the well-kno
wn traditional theory are not valid. The scattering rates thus obtaine
d are then used to estimate the zero-field mobility characteristics in
an n-channel Si inversion layer. I is found that the finite energy of
the phonons makes the energy and lattice temperature dependence of th
e scattering rate, and consequently the lattice temperature dependence
of the mobility, signifcantly different from what follows, in the lig
ht of traditional theory which assumes equipartition law for the phono
n distribution and neglects the phonon energy in comparison to the car
rier energy. (C) 1997 Elsevier Science B.V.