Dephasing and interaction of excitons in CdSe/ZnSe islands

Citation
Hp. Wagner et al., Dephasing and interaction of excitons in CdSe/ZnSe islands, J CRYST GR, 214, 2000, pp. 747-751
Citations number
17
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
214
Year of publication
2000
Pages
747 - 751
Database
ISI
SICI code
0022-0248(200006)214:<747:DAIOEI>2.0.ZU;2-Q
Abstract
The dephasing of excitons in self-organized CdSe/ZnSe islands grown by mole cular-beam epitaxy is investigated using spectrally resolved four-wave mixi ng. A distribution of dephasing times is observed, indicating the existence of localized excitons with different relaxation times at comparable transi tion energies. Polarization-dependent measurements identify the formation o f biexcitons. The observed large biexciton binding energy of 22 meV increas es with decreasing exciton energy, which is attributed to an increasing thr ee-dimensional confinement. (C) 2000 Elsevier Science B.V. All rights reser ved.