Photoluminescence core-level excitation of CdSe quantum dot structures

Citation
K. Maehashi et al., Photoluminescence core-level excitation of CdSe quantum dot structures, J CRYST GR, 214, 2000, pp. 752-755
Citations number
3
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
214
Year of publication
2000
Pages
752 - 755
Database
ISI
SICI code
0022-0248(200006)214:<752:PCEOCQ>2.0.ZU;2-T
Abstract
We propose a new method of photoluminescence (PL) measurements, that is, ex citing core levels using synchrotron radiation. This method has been applie d to characterize CdSe quantum dot (QD) structures in this study. PL spectr a of the CdSe QD sample under Zn 2p core-level excitation are slightly diff erent from conventional FL. PL core-level excitation (PLCLE) spectra have s harp Zn 2p(3/2) and Zn 2p(1/2) absorption edges and core-exciton peaks for CdSe QDs. Moreover, the PLCLE spectra reveal interfacial states between ZnS e barrier layers and CdSe QDs. This result indicates that PLCLE is useful a s a local probe for the thin films and semiconductor nanostructures. (C) 20 00 Elsevier Science B.V. All rights reserved.