Optical observation of quantum-dot formation in sub-critical CdSe layers grown on ZnSe

Citation
Cs. Kim et al., Optical observation of quantum-dot formation in sub-critical CdSe layers grown on ZnSe, J CRYST GR, 214, 2000, pp. 761-764
Citations number
16
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
214
Year of publication
2000
Pages
761 - 764
Database
ISI
SICI code
0022-0248(200006)214:<761:OOOQFI>2.0.ZU;2-Y
Abstract
The evolution of CdSe quantum dot (QD) formation on ZnSe was investigated o n a series of samples grown by MBE, with nominal CdSe coverages ranging fro m 1.1 to 2.6 monolayers (ML). Micro-PL data suggest strongly confined zero- dimensional excitons even for coverages as low as 1.1 ML. PL and micro-PL d ata show emission from the QDs as well as from an accompanying 2 D layer; t he temperature dependence of these emissions is notably different. Strong r ed-shifts of both emissions as the CdSe coverage increases are observed. (C ) 2000 Elsevier Science B.V. All rights reserved.