Time-resolved photoluminescence of ZnCdSe single quantum dots

Time-resolved photoluminescence study is carried out on ZnCdSe quantum dots (QDs) that are spontaneously formed on cleavage-induced fresh ZnSe (110) s urface. Both rise and decay times show dependence on QD sizes. The size dep endence of rise time is explained by the carrier capture from the ZnSe barr ier into the QDs, which is determined by the overlap between the wave Funct ions of the QD state and the barrier state. On the other hand, the decay ti me is interpreted by taking into account the electron-hole separation and t he overlap between the wave functions of the electrons and the holes. (C) 2 000 Elsevier Science B.V. All rights reserved.