Fine structure of the exciton groundstate in self-assembled CdSe quantum dots

Citation
J. Puls et al., Fine structure of the exciton groundstate in self-assembled CdSe quantum dots, J CRYST GR, 214, 2000, pp. 774-777
Citations number
15
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
214
Year of publication
2000
Pages
774 - 777
Database
ISI
SICI code
0022-0248(200006)214:<774:FSOTEG>2.0.ZU;2-N
Abstract
The fine structure of the heavy-hole exciton in CdSe quantum dots grown on ZnSe by molecular beam epitaxy is studied. The application of a tilted magn etic field allows us to observe all four levels of the ground state simulta neously. The zero-field separation between the optically forbidden and allo wed doublets ranges between 1.7 and 1.9 meV and is markedly reduced due to the existence of a wetting layer and the finite energy barrier at the heter o-interface. The energy splitting within the allowed doublet (200 mu eV) is substantially larger than for the forbidden states (less than or equal to 20 mu eV), proving that a dominant contribution arises from the long-ranged part of the electron-hole exchange interaction. The total set of g-factors is derived. A huge anisotropy for the electron is found. (C) 2000 Elsevier Science B.V. All rights reserved.