The dynamic properties of hot excitons near the effective excitonic mobilit
y edge are investigated in a CdSe/ZnSe superlattice structure where thermal
ized luminescence of localized excitons is strongly suppressed due to tunne
ling towards the attached deeper ZnCdSe quantum well. Time-resolved selecti
ve-excitation luminescence measurements reveal a rather complicated relaxat
ion behavior involving fast (20-30 ps) acoustical-phonon-assisted selective
occupation of states located close to the mobility edge. (C) 2000 Elsevier
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