Dynamics of excitons near the mobility edge in CdSe/ZnSe superlattices

Citation
Aa. Toropov et al., Dynamics of excitons near the mobility edge in CdSe/ZnSe superlattices, J CRYST GR, 214, 2000, pp. 806-809
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
214
Year of publication
2000
Pages
806 - 809
Database
ISI
SICI code
0022-0248(200006)214:<806:DOENTM>2.0.ZU;2-D
Abstract
The dynamic properties of hot excitons near the effective excitonic mobilit y edge are investigated in a CdSe/ZnSe superlattice structure where thermal ized luminescence of localized excitons is strongly suppressed due to tunne ling towards the attached deeper ZnCdSe quantum well. Time-resolved selecti ve-excitation luminescence measurements reveal a rather complicated relaxat ion behavior involving fast (20-30 ps) acoustical-phonon-assisted selective occupation of states located close to the mobility edge. (C) 2000 Elsevier Science B.V, All rights reserved.