Dephasing of negatively charged excitons in ZnMgSe/ZnSe single quantum wells

Citation
Hp. Tranitz et al., Dephasing of negatively charged excitons in ZnMgSe/ZnSe single quantum wells, J CRYST GR, 214, 2000, pp. 842-846
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
214
Year of publication
2000
Pages
842 - 846
Database
ISI
SICI code
0022-0248(200006)214:<842:DONCEI>2.0.ZU;2-J
Abstract
We investigate the interaction and dephasing of excitons and negatively cha rged excitons (trions) in ZnSe/Zn0.9Mg0.1Se single quantum wells by intensi ty- and temperature-dependent spectrally resolved transient four-wave mixin g. The studies show that the incoherent electrons which are involved in the formation of trions are optically excited from the GaAs substrate. The hom ogeneous linewidths of the exciton- and trion-transition increase with incr easing captured electron density that saturates at high excitation intensit ies. With increasing temperature the electron density in the quantum well i s reduced due to thermal activation and a decrease of the trion peak intens ity and of the exciton and trion homogeneous linewidths is observed. (C) 20 00 Elsevier Science B.V. All rights reserved.