The effect of (Al, I) impurities and heat treatment on lattice parameter of single-crystal ZnSe

We have measured the precise lattice parameter of undoped and impurity-dope d ZnSe single crystals by the Fewster method. The lattice parameter of undo ped ZnSe single crystals was 0.566919 +/- 0.000002 nm and it remained uncha nged after the Zn-treatment at 1000 degrees C. On the other hand, dilation of lattice parameter observed in I-doped ZnSe depended on Zn-treatment temp erature, Increase of lattice parameter also occurred in Al-doped ZnSe. Thes e results suggest that I and Al impurities in ZnSe crystal play an importan t role with point defects formation during and after the Zn heat treatment. (C) 2000 Elsevier Science B.V. All rights reserved.