Efficient luminescence from Sm-doped ZnSSe/undoped-ZnS multi-quantum wells

Photoluminescence (PL) properties of Sm-doped ZnSSe/ZnS multi-quantum wells were studied. The PL spectra were dominated by red-emission around 651 nm due to intra-atomic 4f-4f ((4)G(2/5)-H-6(9/2)) transition of Sm3+. It was f ound that the PL intensity significantly increased and the peak position sh ifted to longer wavelength with decreasing well width. A significant enhanc ement of the PL intensity can be interpreted as an increase of the energy t ransfer probability from quantum wells to the Sm3+ ions. A novel material w hich has a high efficiency of radiative recombination is suggested. (C) 200 0 Elsevier Science B.V. All rights reserved.