Passivation and reactivation of shallow level defects in p-CdTe after low-energy hydrogen implantation

We implanted hydrogen in p-CdTe with very low energy (300 eV/H+) to minimiz e self trapping at implantation defects. It is shown by capacitance-voltage (C-V) profiling that hydrogen is mobile in the investigated temperature ra nge between 315 and 360 K during implantation and a complete passivation of acceptor concentrations in the order of 10(16) cm(-3) can be achieved. Acc epters with a band-gap level of E = E-V + 0.23 eV, which are assigned to ca dmium vacancies V-Cd as well as acceptors with E = E-V + 0.14 eV (Cu-Cd) ar e passivated. Indium-hydrogen pairs or In-V-Cd-H complexes were not observe d by PAC spectroscopy(In-111 probe atoms) after hydrogen implantation. (C) 2000 Elsevier Science B.V. All rights reserved.