Excitons, microcavity physics and devices in wide bandgap semiconductors

Authors
Citation
Av. Nurmikko, Excitons, microcavity physics and devices in wide bandgap semiconductors, J CRYST GR, 214, 2000, pp. 993-1001
Citations number
28
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
214
Year of publication
2000
Pages
993 - 1001
Database
ISI
SICI code
0022-0248(200006)214:<993:EMPADI>2.0.ZU;2-C
Abstract
In this paper we review basic research on widegap semiconductor microcaviti es that has shown how the fundamental features of IT-VI-based quantum well heterostructures can give rise to enhancements in the light-matter interact ion due to exciton-photon coupling effects. As these effects have been seen to extend into the regime of stimulated emission and vertical cavity lasin g, they are of potential practical interest for the nitride widegap semicon ductors as well. A major question for the II-VI semiconductors is whether a combination of lower dimensional gain medium, together with innovative mic roresonator design and excitation scheme can lead to an efficient, low curr ent density, and practical green coherent optical sourer. (C) 2000 Elsevier Science B.V. All rights reserved.