MOVPE growth of ZnSe/ZnMgS distributed Bragg reflectors with high refractive-index contrast

ZnSe/ZnMgS distributed Bragg reflectors (DBRs) with a high refractive-index contrast were grown on GaAs (1 0 0) substrates by metalorganic vapor-phase epitaxy. The difference of the refractive indices between ZnSe and Zn0.27M g0.73S was estimated to be about 0.52 at 510 nm, which is very large compar ed with previous II-VI DBRs. The maximum reflectivity of the grown ZnSe/Zn0 .27Mg0.73S DBRs (with only 5-periods) was measured to be 93 % at 510 nm at room temperature. DBRs with a high refractive-index contrast can reduce the penetration depth of light into the DBR and have the potential to increase the strength of the exciton-photon coupling in a microcavity. (C) 2000 Els evier Science B.V. All rights reserved.