Enhancement of spontaneous emission by ZnS-based II-VI semiconductor photonic dots

Selectively grown ZnS-based II-VI semiconductor photonic dot structures, wh ich have ZnSe active layers inside, were studied. The luminescence from the photonic dot structures showed modulation of the spontaneous emission at t he optical resonance wavelengths, which was observed by the mu-photolumines cence measurements. However, the modulation of the spontaneous emission was weak. This was caused by the geometry of the ZnSe layers. The ZnSe layers were grown isotropically on (0 0 1) and {0 3 4} ZnS planes. The luminescenc e from the ZnSe/ZnS photonic dots, being superimposed more with the one fro m the layers grown on the {0 3 4} ZnS side facets, was not coupled efficien tly with the cavity modes. The modulation effects were much improved by etc hing the pyramids to avoid the luminescence from the side ZnSe layers on th e {0 3 4) facets. (C) 2000 Elsevier Science B.V. All rights reserved.