High-resolution X-ray diffraction study of degrading ZnSe-based laser diodes

Citation
T. Gerhard et al., High-resolution X-ray diffraction study of degrading ZnSe-based laser diodes, J CRYST GR, 214, 2000, pp. 1049-1053
Citations number
7
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
214
Year of publication
2000
Pages
1049 - 1053
Database
ISI
SICI code
0022-0248(200006)214:<1049:HXDSOD>2.0.ZU;2-Z
Abstract
We present high-resolution X-ray diffraction measurements on degraded II-VI -laser diodes. Reciprocal space maps were measured using a new single expos ure technique at a microfocus beamline of the European Synchrotron Radiatio n Facility. Both degradation in samples with and without stacking faults wa s studied. In all cases the lattice of the observed samples is astonishingl y stable even in the case of massive degradation, and lattice constant chan ges, plastic relaxation, and an increase in lattice disorder can be exclude d within the conventional sensitivity limits of high-resolution diffraction . Thus the softness of the II-VI lattice is not a main reason for degradati on. (C) 2000 Elsevier Science B.V. All rights reserved.