Lateral-index-guided ZnCdSSe lasers

Citation
M. Strassburg et al., Lateral-index-guided ZnCdSSe lasers, J CRYST GR, 214, 2000, pp. 1054-1057
Citations number
18
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
214
Year of publication
2000
Pages
1054 - 1057
Database
ISI
SICI code
0022-0248(200006)214:<1054:LZL>2.0.ZU;2-Z
Abstract
Index-guided ZnCdSSe-based lasers were fabricated by using laterally struct ured implantation-induced intermixing. The spatially selective intermixing induced a lateral refractive index step allowing for TEM00 emission. Using this method, we could reduce the threshold current density from 447 to 153 A/cm(2). The emission characteristics of such lasers are clearly improved w hen compared with conventional lasers. (C) 2000 Elsevier Science B.V. All r ights reserved.