Index-guided ZnCdSSe-based lasers were fabricated by using laterally struct
ured implantation-induced intermixing. The spatially selective intermixing
induced a lateral refractive index step allowing for TEM00 emission. Using
this method, we could reduce the threshold current density from 447 to 153
A/cm(2). The emission characteristics of such lasers are clearly improved w
hen compared with conventional lasers. (C) 2000 Elsevier Science B.V. All r
ights reserved.