Full-color light-emitting diodes from ZnCdMgSe/ZnCdSe quantum well structures grown on InP substrates

We have grown p-type ZnCdMgSe quaternary layers and have fabricated light-e mitting diodes (LEDs) from pseudomorphic quantum well (QW) structures of Zn CdSe/ZnCdMgSe grown on InP substrates that emit throughout the visible rang e. Nearly identical structures, differing only in the ZnCdSe QW layer thick ness and/or composition can produce light ranging from blue to red. Good cu rrent-voltage characteristics are obtained from the diodes using p + ZnSeTe lattice matched to InP as the p-type contact layer. These structures have potential applications as integrated full-color display elements. (C) 2000 Elsevier Science B.V. All rights reserved.