The first phosphor-free white LED based on II-IV compound materials is demo
nstrated. Our device utilizes a phenomenon unique to ZnSe homoepitaxy, wher
e a portion of the main greenish-blue emission from the active layer of a p
n junction diode is absorbed by the conductive substrate which in turn give
s off an intense broad-band yellow emission centered around 585 nm by photo
luminescence. These two emission bands combine to give a spectrum which app
ears while to the naked eye. A typical ZnSe-based white LED lamp exhibits a
color temperature of approximately 3400 K with a CRI (color rendering inde
x) of 68. The optical output power and operating voltage of such a device a
t a forward current of 20 mA is 2.0 mW and 2.7 V, respectively. The luminou
s efficiency estimated from these results is 10.41 m/W, which is comparable
to the incandescent lamp as well as the commercial InGaN-based white LED.
Device lifetimes (half-life) have exceeded 800 h at 20 degrees C. (C) 2000
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