ZnSe/BeTe type-II LEDs emitting between 640 and 515 nm

We report the growth and characterization of LEDs with wavelengths from 640 to 515 nm based on ZnSe/BeTe type-IT transitions. The spatially indirect t ransition shows bright luminescence at room temperature probably due to a s trong carrier confinement at the interface. In addition, the device lifetim e reaches values above 1000 h. This relatively good device stability call b e explained by a reduction of stacking faults at the growth start with BeTe , the reduction of strain in the active zone, the absence of nitrogen-doped ZnSe, and the Fully pseudomorphic p-BeTe contact. (C) 2000 Elsevier Scienc e B.V. All rights reserved.