ZnTe pure green light-emitting diodes fabricated by thermal diffusion

We have first succeeded in fabricating intrinsic pn-junctions and in realiz ing pure green ZnTe light-emitting diodes (LEDs). This success has been ach ieved by the growth of high-quality ZnTe single crystals with low defect de nsities and by the realization of n-type layers in the p-type ZnTe substrat es by a thermal diffusion process. EBIC observation and I-V measurement con firmed the formation of the intrinsic pn-junction. Electroluminesence at 55 0 nm is visualized under room light at room temperature. (C) 2000 Elsevier Science B.V. All rights reserved.