Design of new UV/blue/green light emitters made of hexagonal-phase ZnMgCdOSSe mixed-crystal system fabricated on GaAs- and InP-(111) substrates

A new candidate for long lifetime short-wavelength light emitters made of h exagonal II-VT compounds has been proposed. Tn this payer, the results of t heoretical design of ZnMgCdOSSe-based light emitters fabricated on (1 1 1) plane of GaAs and InP substrates is presented. The band lineups of CdZnS/Zn SSe and CdZnS/ZnMgS structures were estimated with Harrison's LCAO theory. Further, as for the first step of an experimental investigation on the grow th of high phase-quality hexagonal II-Vt compounds, growth of CdZnS epilaye rs were examined on GaAs(1 1 1) substrate. The epilayers were characterized by high-resolution X-ray diffraction reciprocal space and pole figure meas urements. In this study, the optimum growth temperature was 300 degrees C f or hexagonal phase CdZnS, and the inclusion of cubic phase CdZnS drasticall y decreased with increasing Cd content at 300 degrees C. (C) 2000 Elsevier Science B.V. All rights reserved.