Growth of CdZnTe and CdSeTe crystals for p-i-n radiation detectors

High-energy radiation detectors being operated at room temperature have bee n extensively studied on the bulk CdZnTe. Metal organic chemical vapor depo sition (MOCVD) technique has been intensively investigated in the low subst rate temperature of epitaxial film growth. Hydrogen radicals generated by i nductively coupled RF remote plasma are introduced into the reaction region with source materials. These epitaxial growth processes are carried out at a low substrate temperature below 200 degrees C. The results obtained sugg est that the remote plasma-enhanced MOCVD method can be one of the promisin g methods for CdZnTe-CdSeTe epitaxial growth. These growths are proposed fo r fabrication of the high-energy radiation detector. Using this technique, p-type CdZnTe layer and n-type CdSeTe epitaxial layer are formed on intrins ic CdZnTe substrate to fowl p-i-n diode. (C) 2000 Elsevier Science B.V. All rights reserved.