High-sensitivity p-i-n-detectors for the visible spectral range based on wide-gap II-VI materials

We describe the fabrication of p-i-n detectors for the visible and near-UV spectral range made of wide-gap II-VI materials. Uncoated devices exhibit e xternal quantum efficiencies as high as 70% at the band gap of the active z one, the losses being nearly exclusively due to reflection. Due to the high -energy gaps, dark currents that are five times lon er than those of compar able silicon devices have been achieved. Depending on the material used for the intrinsic zone of the diode, the devices are sensitive between 250 and 580 nm. The flexibility in heterostructure design allows an easy realizati on of very effective detector/filter combinations as well as prototypes of wavelength-sensitive devices. (C) 2000 Elsevier Science B.V. All rights res erved.