ZnSe : Sb/ZnSe : Cl heteroepitaxial LED grown by MOVPE

The MOVPE growth of blue-emitting devices based on ZnSe is mainly hindered by the lack of sufficient p-type doping. We have used the Sb precursor tris dimethylaminoantimony (TDMASb) for antimony doping of ZnSe in our MOVPE gro wth process. ZnSe:Sb layers showing p-type conductivity as well as ZnSe:Sb/ ZnSe:Cl p-n junction diodes were deposited on p-type GaAs:Zn substrates. Th e diode structures show blue electroluminescence under forward bias. Photol uminescence at T-PL = 16 It and electroluminescence in the temperature rang e of T-EL = 16-300 K were measured. (C) 2000 Elsevier Science B.V. All righ ts reserved.