Microstructure and chemistry of nonstoichiometric (Ba,Sr)TiO3 thin films deposited by metalorganic chemical vapor deposition

Citation
I. Levin et al., Microstructure and chemistry of nonstoichiometric (Ba,Sr)TiO3 thin films deposited by metalorganic chemical vapor deposition, J MATER RES, 15(7), 2000, pp. 1433-1436
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914 → ACNP
Volume
15
Issue
7
Year of publication
2000
Pages
1433 - 1436
Database
ISI
SICI code
0884-2914(200007)15:7<1433:MACON(>2.0.ZU;2-J
Abstract
The microstructure and chemistry of (Ba,Sr)TiO3 thin films deposited on Pt/ SiO2/Si substrates by metalorganic chemical Vapor deposition were studied u sing high-resolution transmission electron microscopy and quantitative spec trum imaging in electron energy loss spectroscopy. The grain boundaries in all films with overall Ti content ranging from 50.7% to 53.4% exhibit a sig nificant increase in Ti/Ba ratio as compared to the grain interiors. The re sults suggest that the deviations of Ti/(Ba + Sr) ratio from the stoichiome tric value of unity are accommodated by the creation of Ba/Sr vacancies, wh ich segregate to the grain boundary regions. The films with Ti contents equ al to or greater than 52% additionally contained an amorphous Ti-rich phase at some grain boundaries and multiple grain junctions; the amount of this phase increases with increasing overall Ti content. The analysis indicates that the amorphous phase can only partially account for the significant dro p in dielectric permittivity accompanying increases in the Ti/(Ba + Sr) rat io.