I. Levin et al., Microstructure and chemistry of nonstoichiometric (Ba,Sr)TiO3 thin films deposited by metalorganic chemical vapor deposition, J MATER RES, 15(7), 2000, pp. 1433-1436
The microstructure and chemistry of (Ba,Sr)TiO3 thin films deposited on Pt/
SiO2/Si substrates by metalorganic chemical Vapor deposition were studied u
sing high-resolution transmission electron microscopy and quantitative spec
trum imaging in electron energy loss spectroscopy. The grain boundaries in
all films with overall Ti content ranging from 50.7% to 53.4% exhibit a sig
nificant increase in Ti/Ba ratio as compared to the grain interiors. The re
sults suggest that the deviations of Ti/(Ba + Sr) ratio from the stoichiome
tric value of unity are accommodated by the creation of Ba/Sr vacancies, wh
ich segregate to the grain boundary regions. The films with Ti contents equ
al to or greater than 52% additionally contained an amorphous Ti-rich phase
at some grain boundaries and multiple grain junctions; the amount of this
phase increases with increasing overall Ti content. The analysis indicates
that the amorphous phase can only partially account for the significant dro
p in dielectric permittivity accompanying increases in the Ti/(Ba + Sr) rat
io.