X-RAY-DIFFRACTION ANALYSIS ON THE RF-CVD DEPOSITED CARBON NITRIDE FILMS

Citation
Dw. Wu et al., X-RAY-DIFFRACTION ANALYSIS ON THE RF-CVD DEPOSITED CARBON NITRIDE FILMS, Solid state communications, 103(3), 1997, pp. 193-196
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
103
Issue
3
Year of publication
1997
Pages
193 - 196
Database
ISI
SICI code
0038-1098(1997)103:3<193:XAOTRD>2.0.ZU;2-P
Abstract
The X-ray diffraction (XRD) spectra of carbon nitride films deposited on Si and alloy steel substrates have been studied. The experimental r esults indicate that beta-C3N4 crystal film is relatively easy to be d eposited on the Si wafer with a Si3N4 buffer layer and post-treatment at 800 degrees C helps the films to crystallize. These beta-C3N4 cryst als bear a specific orientation relationship with the direction of Si wafer. Seven diffraction peaks for beta-C3N4 and six ones for alpha-C3 N4 have been observed for C-N film on the alloy steel substrate. These XRD results match the theoretical calculated lattice constants of bet a-C3N4 and alpha-C3N4 pattern. (C) 1997 Elsevier Science Ltd.