Plasma associated diamond nucleation on AlN in hot-filament chemical vapordeposition

Authors
Wang, WL Liao, KJ Zhang, RQ
Citation
Wl. Wang et al., Plasma associated diamond nucleation on AlN in hot-filament chemical vapordeposition, MATER LETT, 44(6), 2000, pp. 336-340
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167577X → ACNP
Volume
44
Issue
6
Year of publication
2000
Pages
336 - 340
Database
ISI
SICI code
0167-577X(200007)44:6<336:PADNOA>2.0.ZU;2-1
Abstract
Diamond films have been deposited on AlN substrates using hot filament chem ical vapor deposition. By applying a negative bias voltage, a high diamond nucleation density on AlN substrates as high as 10(10) cm(-2) has been real ized. The appearance of bias current and plasma induced on the AlN surface was found critical for the enhancement of diamond nucleation density. Satis factory adhesion of the deposited diamond films with the AlN substrates has been achieved for application purposes. (C) 2000 Elsevier Science B.V. All rights reserved.