Quasi-hydrodynamic modelling and computer simulation of coupled thermo-electrical processes in semiconductors

Authors
Citation
Rvn. Melnik et H. He, Quasi-hydrodynamic modelling and computer simulation of coupled thermo-electrical processes in semiconductors, MATH COMP S, 52(3-4), 2000, pp. 273-287
Citations number
6
Categorie Soggetti
Engineering Mathematics
Journal title
MATHEMATICS AND COMPUTERS IN SIMULATION
ISSN journal
03784754 → ACNP
Volume
52
Issue
3-4
Year of publication
2000
Pages
273 - 287
Database
ISI
SICI code
0378-4754(20000630)52:3-4<273:QMACSO>2.0.ZU;2-C
Abstract
The quasi-hydrodynamic model for semiconductor devices is a typical example of non-local models which, in contrast to the conventional drift-diffusion models, allows to account for non-equilibrium processes in semiconductor p lasma. In this paper, we present results of a numerical simulation of semic onductor devices using the quasi-hydrodynamic model. The results have been obtained with the package SCSIMU, a C++ based program in which efficient ex ponential difference schemes for the quasi-hydrodynamic model have been imp lemented. Algorithmic procedures and modelling of realistic semiconductor d evices such as ballistic and PIN diodes are discussed with numerical result s. (C) 2000 IMACS/Elsevier Science B.V. All rights reserved.