Electrical and optical properties of carbon implanted In2O3 thin film

Electrical and optical properties of In2O3 thin film with carbon ion implan tation have been studied. The location of the implanted carbon in the film was also investigated by means of a high-resolution electron microscope. Ca rbon ions were implanted into In2O3 thin films with an energy of 30 keV at doses of 1 x 10(15) to 2 x 10(16) cm(-2). After implantation the films were annealed for 1 h in air and subsequently for 1 h in a vacuum. After the tw o step annealing at 350 degrees C, the electrical resistivity achieved for a sample with an ion dose of 5 x 10(15) cm(-2) was 5.4 x 10(-4) Ohm cm with an optical transmittance of 82% at a wavelength of 550 nm. (C) 2000 Elsevi er Science B.V. All rights reserved.