Enhancing the breakdown voltages of Au/n-Si Schottky diodes by boron ion beam-induced edge termination

Boron ion implantation for edge termination of Au/n-Si Schottky diode has b een studied to enhance the breakdown voltages of the diodes, Ion energies o f 30 and 50 keV were adopted to achieve edge-terminated Schottky diodes. Fo ur doses of 1 x 10(13). 1 x 10(14), 1 x 10(15) and 1 x 10(16) B cm(-2) were used for each energy. The Schottky diodes with edge termination show much higher breakdown voltages than the diodes without edge termination if the i on dose is controlled. For instance the diodes treated with low doses achie ve high breakdown voltages while the diodes with high doses of 1 x 10(15) a nd 1 x 10(16) B cm(-2) easily fail at low voltages showing early breakdown and high current leakage. According to the results from current-voltage (I- V), the current leakage is reasoned to result from deep level defects intro duced by B inn implantation and the leakage at a reverse bias of -40 V is m aintained low up to an elevated temperature of 160 degrees C. (C) 2000 Else vier Science B.V. All rights reserved.