Muonium transitions in n-type gallium nitride

The temperature-dependent asymmetries for zero-field relaxation components are used to characterize muonium transitions in n-type GaN. Kubo-Toyabe com ponents are associated with Mu(-) states and an exponential is assigned to Mu(0) centers. Transitions observed in the 150-200 K region result in Mu(-) trapped at a metastable site. A model-dependent analysis allows separation of contributions from the two Mu(-) states. The Mu(0)-related rate diverge s near 600 K, and Mu(-) begins to exit the metastable location. Approximate transition energies are obtained within this constrained treatment. (C) 20 00 Elsevier Science B.V. All rights reserved.