Muon dynamics in GaAs LPE lightly doped material: initial RF mu SR study

Authors
Hitti, B Kreitzman, SR Lichti, R Head, T Estle, TL Wynne, D Haller, EE
Citation
B. Hitti et al., Muon dynamics in GaAs LPE lightly doped material: initial RF mu SR study, PHYSICA B, 289, 2000, pp. 554-557
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
289
Year of publication
2000
Pages
554 - 557
Database
ISI
SICI code
0921-4526(200008)289:<554:MDIGLL>2.0.ZU;2-X
Abstract
The first (RF)mu SR data is presented on high-quality liquid-phase epitaxy (LPE) grown GaAs, material known to have a defect concentration comparable to its dopant levels. Our initial data on two n-type samples is compared to results in commercial semi-insulating material and to the better understoo d situation ill Si. Some preliminary interpretations are given. (C) 2000 El sevier Science B.V. All rights reserved.