Range studies of low-energy muons in a thin Al film

The range of low-energy mu(+) in a thin Al film deposited on a quartz glass substrate has been investigated as a function of the mu(+) implantation en ergy by measuring the amplitude of the diamagnetic signal in a transverse f ield experiment. The mu(+) implantation energy was varied between 3.4 and 2 9.4 keV. The mu(+) asymmetry, which reflects the fraction of mu(+) stopped in Al, is found to decrease with increasing energy. The results are compare d and found in good agreement with predictions of a Monte Carlo program, wh ich simulates the implantation profiles of muons in matter. (C) 2000 Elsevi er Science B.V. All rights reserved.