Epitaxial growth of La2Zr2O7 thin films on rolled Ni-substrates by sol-gelprocess for high T-c superconducting tapes

Citation
Tg. Chirayil et al., Epitaxial growth of La2Zr2O7 thin films on rolled Ni-substrates by sol-gelprocess for high T-c superconducting tapes, PHYSICA C, 336(1-2), 2000, pp. 63-69
Citations number
34
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
336
Issue
1-2
Year of publication
2000
Pages
63 - 69
Database
ISI
SICI code
0921-4534(20000701)336:1-2<63:EGOLTF>2.0.ZU;2-O
Abstract
A solution process was used to grow epitaxial La2Zr2O7 (LZO) buffer layers on roll-textured Ni (100) substrates to produce YBa2Cu3O7-delta (YBCO)-coat ed conductors. The LZO precursor solution was prepared by an all alkoxide s ol-gel route using mixed metal methoxyethoxides in 2-methoxyethanol. The pa rtially hydrolyzed solution was either spin-coated or dip-coated onto the t extured Ni substrates. The amorphous thin film was then heat treated at 115 0 degrees C under (96%)Ar/(4%)H-2 atmosphere for 1 h. X-ray diffraction (XR D) of the buffer layer indicated a strong c-axis orientation on the Ni (100 ) substrate. The LZO (222) pole figure revealed a single cube-on-cube textu re. SEM images of the LZO buffer layer showed a dense microstructure withou t cracks. The YBCO deposited on the sol-gel LZO-buffered Ni substrates with sputtered YSZ and CeO2 top layers had a critical current density of 480,00 0 A/cm(2) at 77 K and self-field. (C) 2000 Elsevier Science B.V. All rights reserved.