Defect scattering in high T-c and colossal magnetoresistive tunnel junctions

Citation
Jn. Eckstein et al., Defect scattering in high T-c and colossal magnetoresistive tunnel junctions, PHYSICA C, 335(1-4), 2000, pp. 184-189
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
335
Issue
1-4
Year of publication
2000
Pages
184 - 189
Database
ISI
SICI code
0921-4534(200006)335:1-4<184:DSIHTA>2.0.ZU;2-S
Abstract
Disorder causes both superconducting cuprate and colossal magnetoresistive manganite based tunnel junctions to depart from properties based solely on the superconductivity or magnetism inherent in the materials. Amorphous bar rier layers cause diffuse reflection of quasiparticle states at the insulat or-superconductor interface, resulting in a local quenching of the d-wave o rder parameter. A subdominant order parameter evolves at low temperatures i n these layers. In manganites, interface disorder reduces spin polarization and causes the tunneling magnetoresistance in spin valve devices to be sma ller than in junctions with less disorder. (C) 2000 Published by Elsevier S cience B.V.