A particular configuration of columnar defects (Gaussian splay) has been in
stalled in a YBa2Cu3O7 Single crystal by irradiation with heavy ions. The i
nfluence of this kind of splay on the pinning efficiency has been very cont
roversial in the literature. In the present study, the Gaussian splay has b
een achieved by defocusing the incident ion beam through a metallic foil. I
ts pinning efficiency has been compared to that of a standard configuration
of tracks parallel to the c axis. In the largest part of the H-T plane, it
is shown that the persistent current densities are actually higher in the
Gaussian splay than in the parallel configuration.