Electronic specific heat at the boundary region of the metal-insulator transition in the two-dimensional electronic system of kappa-(BEDT-TTF)(2)Cu[N(CN)(2)]Br

Citation
Y. Nakazawa et al., Electronic specific heat at the boundary region of the metal-insulator transition in the two-dimensional electronic system of kappa-(BEDT-TTF)(2)Cu[N(CN)(2)]Br, PHYS REV B, 61(24), 2000, pp. R16295-R16298
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
61
Issue
24
Year of publication
2000
Pages
R16295 - R16298
Database
ISI
SICI code
0163-1829(20000615)61:24<R16295:ESHATB>2.0.ZU;2-G
Abstract
The electronic specific heat of partially deuterated organic conductors kap pa-(BEDT-TTF)(2)Cu[N(CN)(2)]Br, [where BEDT-TTF denotes bis(ethylenedithio) tetrathiafulvalene], which are situated around the critical boundary of a m etal-insulator transition in two dimensions, are studied. It was found that when the system has access to the M-I boundary with the progressive deuter ation of BEDT-TTF molecules, the normal-state gamma term diminishes. The ab sence of mass enhancement is marked as a basis for the future study of elec tronic features related to the nature of superconductivity and also on the universality and variation of a possible Mott transition in two-dimensional systems.