Weakly bound carbon-hydrogen complex in silicon

Citation
L. Hoffmann et al., Weakly bound carbon-hydrogen complex in silicon, PHYS REV B, 61(24), 2000, pp. 16659-16666
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
61
Issue
24
Year of publication
2000
Pages
16659 - 16666
Database
ISI
SICI code
0163-1829(20000615)61:24<16659:WBCCIS>2.0.ZU;2-J
Abstract
Local vibrational modes of a weakly bound carbon-hydrogen complex in silico n have been identified with infrared-absorption spectroscopy. After implant ation of protons at similar to 20 K and subsequent annealing at 180 K, two carbon modes at 596 and 661 cm(-1), and one hydrogen mode at 1885 cm(-1) ar e observed. The three modes originate from the same complex, which is ident ified as bond-centered hydrogen in the vicinity of a nearby substitutional carbon atom. Ab initio theory has been applied to calculate the structure a nd local modes of carbon-hydrogen complexes with hydrogen located at the fi rst, second, and third nearest bond-center site to substitutional carbon. T he results support our assignment.