Layer interface roughness effects in the coherent intraband transitions ofexcitons in quantum well structures

Citation
Sm. Sadeghi et J. Meyer, Layer interface roughness effects in the coherent intraband transitions ofexcitons in quantum well structures, PHYS REV B, 61(24), 2000, pp. 16841-16846
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
61
Issue
24
Year of publication
2000
Pages
16841 - 16846
Database
ISI
SICI code
0163-1829(20000615)61:24<16841:LIREIT>2.0.ZU;2-V
Abstract
Using photoluminescence spectroscopy we study the effects of exciton locali zation and interface growth islands in the coherent intraband transitions b etween the exciton states associated with the first and second conduction s ubbands. We show that the growth islands can act as submicron quantum syste ms with distinct energy-level configurations. Our results show that these s ystems interact differently with an intense infrared laser, causing a nearl y two-dimensional medium with spatially modulated optical properties. We al so show that the exciton localization enhances the coherent intraband trans itions and discuss how these transitions can be used to study morphology of the interfaces between quantum well layers.