The response of the point defect and antistructure systems to ion beam irra
diation is investigated using methods of linear response on thin single cry
stals of ordered Cu3Au grown by molecular beam epitaxy. We demonstrate that
antisite evolution, as measured by electrical resistance, quantitatively d
etermines both the defect populations and diffusion in the irradiation fiel
d, and we explore new linear and nonlinear response processes as the antist
ructure system is driven from equilibrium.