Arsenic implantation-induced intermixing effects on AlGaAs/GaAs single QW structures

The effects of intermixing Al0.54Ga0.46As/GaAs/Al0.54Ga0.46As quantum well (QW) enhanced by arsenic ion implantation and subsequent annealing have bee n investigated by photoluminescence and photo-modulated reflectance measure ments. Comparing with as-grown QW, obvious blueshifts of all the transition s were observed. The H-22 transition was found to be much less sensitive to the implantation doses than that of H-11. The experimental results are dif ferent from the theoretical results calculated by using the model of error function profile of Al composition. The results are fruitful for understand ing the potential profile after intermixing enhanced by arsenic ion implant ation, and also for the application of implantation enhanced intermixing ef fects on devices, such as QW lasers and photodetectors, opto-nonlinear devi ces, etc.. (C) 2000 Elsevier Science B.V. All rights reserved.