INITIAL-STAGE OF STRESS-INDUCED MIGRATION PHENOMENON IN ALUMINUM INTERCONNECTION ON SEMICONDUCTOR-DEVICE

The initial stage of stress-induced migration in aluminum interconnect ions on semiconductor devices was studied through measurements of the electric resistivity and the residual-stress, as well as observations of grain growth during high temperature storage. It was shown that cha racteristics of the initial stage varied markedly depending on the sto rage temperature and period. The variation of the characteristics was affected not only by (1) increase in grain size or decrease in disloca tion density upon recrystallization, but also by (2) degeneration at t he grain boundary in the aluminum interconnection, which was considere d to be a pile-up of dislocations. In this paper, we propose a model t hat the initial stage of the stress-induced migration is determined by competition between phenomena (1) and (2), and discuss the possibilit y that the open failure rate of the interconnection is correlated qual itatively with the change in the electrical resistivity at the initial stage.