ROOM-TEMPERATURE INASXP1-X-YSBY INAS PHOTODETECTORS WITH HIGH QUANTUMEFFICIENCY/

Room temperature surface-illuminated InAsxP1-x-ySby/InAs photodiodes w ith an external quantum efficiency as high as 50-86% in a 1.83-3.53 mu m wavelength range have been fabricated for the first time. Lattice m atched heterostructures with a wide energy gap InAsPSb cap layer were grown ou the InAs substrate using the Liquid phase epitaxy technique. According to temperature dependence measurements for a 1 mm diameter p hotodiode, peak responsivities of 1.85-2.5 A/W have been realized in a temperature range of 296 to 200 K. The Johnson noise limited room tem peratnre detectivities D are deduced to be 1-6 x 10(9) cm.Hz(1/2)/W a t zero bias. It is demonstrated that the only loss of external quantum efficiency is from the reflection of the entrance face.