INVESTIGATION OF A STEP-DOPED-CHANNEL NEGATIVE-DIFFERENTIAL-RESISTANCE TRANSISTOR

An interesting AlGaAs/InGaAs/GaAs step-doped channel negative-differen tial-resistance transistor (SDCNDRT) has been fabricated. The SDCNDRT is based on a previously reported step-doped-channel field-effect tran sistor, (SDCFET). The N-shaped negative-differential resistance (NDR) are three-terminal-controlled NDR phenomena. We believe that the NDR p henomena can be attributed to the real space transfer (RST). A maximum drain current and peak-to-valley current ratio (PVCR) of 59 mA and 6. 6 are obtained, respectively. The high drain current and PVCR indicate the potential of the SDCFET for practical circuit applications.