ANISOTROPIC RESISTIVITY OF IN-PLANE-ALIGNED LA2-XSRXCUO4(100) FILMS ON LASRGAO4(100) SUBSTRATES

We prepared in-plane aligned La2-xSrxCuO4(100) films using LaSrGaO4(10 0) substrates by KrF laser ablation. The phi scan of X-ray diffraction and the large anistropy of resistivity indicate a high degree of in-p lane epitaxy. The T-c of the in-plane-aligned La2-xSrxCuO4 (x = 0.15) was 21.6 K. The critical temperatures measured along the c-axis were u sually higher than those measured along the a-axis. We also observed v oltage peaks at just above T-c, corresponding to the abrupt decrease o f the anistropy of resistivity at T-c.