ETCHING EFFECTS ON FERROELECTRIC CAPACITORS WITH MULTILAYERED ELECTRODES

Dry etching of PbZrX Ti1-XO3 (PZT) thin film capacitors with RuOX/Pt m ultilayered electrodes was studied to examine the etching effects. PZT films were deposited on RuOX/Pt/Ti/SiO2/Si substrates by sol-gel proc ess and Pt alms were prepared by DC magnetron sputtering. PZT and Pt t hin films were etched with Cl-2/C2F6/Ar gas combination in an inductiv ely coupled plasma (ICP) by varying the etching parameters such as coi l RF power, de-bias voltage to wafer susceptor, and gas pressure. Etch ing effects were investigated in terms of etch rate, etch selectivity, etch profiles, and electrical properties of etched capacitors. Quanti tative analysis of the etching damage was obtained by calculating the shift of the coercive field and tile switchable polarization in hyster esis loops. Finally, the etching damage mechanism was discussed and th e optimization of etching processes for the fabrication of PZT capacit ors was attempted to minimize the etching damage to ferroelectric capa citors.